臺(tái)灣晶圓代工巨頭臺(tái)積電的一名高管表示，目前臺(tái)積電對(duì)28納米(nm)工藝的IC設(shè)計(jì)極為重視，投入是之前40納米工藝準(zhǔn)備期同階段產(chǎn)品數(shù)量的三倍多。 “智能手機(jī)與平板電腦是新的殺手級(jí)應(yīng)用，”臺(tái)積電歐洲區(qū)總裁Maria Marced表示，“我們預(yù)見到了28納米工藝設(shè)計(jì)爆發(fā)的局面，目前我們有89款28nm產(chǎn)品已經(jīng)或即將流片?！彼f，臺(tái)積電占有全世界90%的28nm產(chǎn)品方案。 Marced還表示，臺(tái)積電目前已經(jīng)開始向部分客戶出貨28nm硅片?！耙苿?dòng)互聯(lián)網(wǎng)在同樣性能的前提下，要求更低的功耗?！迸_(tái)積電(臺(tái)灣新竹)在28nm工藝上正在提供高k金屬柵極工藝(HKMG)和傳統(tǒng)的多晶硅工藝，而下一代20nm產(chǎn)品預(yù)計(jì)在2012年下半年就會(huì)量產(chǎn)。” 但是，臺(tái)積電至少要等到14納米節(jié)點(diǎn)才會(huì)采用FinFET技術(shù)。據(jù)說該技術(shù)對(duì)于移動(dòng)應(yīng)用非常有利。這與英特爾相反。英特爾最近宣布把FinFET用于其1270制程(22納米)。1270制程已開始進(jìn)行生產(chǎn)，而今年下半年晚些時(shí)候，位于亞利桑那的F32工廠將開始量產(chǎn)。英特爾把FinFET稱為三柵技術(shù)。 這將使英特爾在工藝尺寸方面領(lǐng)先臺(tái)積電一年左右，而在采用FinFET工藝方面則領(lǐng)先更長(zhǎng)時(shí)間。據(jù)說FinFET在這些更小的節(jié)點(diǎn)上，可以提供比平面晶體管更好的功耗性能。 Maria Marced表示，英特爾是一家垂直整合型企業(yè)，控制了設(shè)計(jì)、制造和測(cè)試的所有環(huán)節(jié)，因此能夠比臺(tái)積電更快地采用FinFET技術(shù)。“我們需要等待FinFET的生態(tài)系統(tǒng)建立，其中包括設(shè)計(jì)工具、知識(shí)產(chǎn)權(quán)、設(shè)計(jì)套件等等。對(duì)于我們來說，20nm仍會(huì)是平面晶體管?！? Marced認(rèn)為，智能手機(jī)/平板電腦殺手級(jí)應(yīng)用方面的設(shè)計(jì)數(shù)量激增，是臺(tái)積電2011年增長(zhǎng)速度將超過整體代工產(chǎn)業(yè)的原因之一。臺(tái)積電計(jì)劃2011年實(shí)現(xiàn)營(yíng)收增長(zhǎng)20%，但預(yù)計(jì)整體產(chǎn)業(yè)增長(zhǎng)15%。同時(shí)，臺(tái)積電認(rèn)為整體半導(dǎo)體市場(chǎng)將僅增長(zhǎng)2%。 本文授權(quán)編譯自EE Times，版權(quán)所有，謝絕轉(zhuǎn)載 參考英文原文：Design starts triple for TSMC at 28-nm， by Peter Clarke

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{pagination} Design starts triple for TSMC at 28-nm Peter Clarke LONDON – The number of IC design starts at 28-nm for foundry Taiwan Semiconductor Manufacturing Co. Ltd. is more than three times what they were at the equivalent stage in the roll out of 40-nm manufacturing processes, according to a company executive. "The smartphone and tablet is the new killer application," said Maria Marced, president of TSMC Europe. "We are seeing a design explosion at 28-nm. We have 89 tape-outs in the pipeline," Marced added. She said that by TSMC's estimate the company currently holds 90 percent of the world's pending tape-outs at 28-nm. And the company is already shipping 28-nm silicon for some customers, Marced said. "The mobile Internet is demanding the same performance at much lower power." TSMC (Hsinchu, Taiwan) is offering both high-k metal gate (HKMG) and conventional polysilicon processes at 28-nm and has 20-nm production slated for volume production in the second-half of 2012. However, TSMC will not deploy FinFET technology, said to be a boon for mobile applications, until at least the 14-nm node. This is in contrast to Intel Corp., which recently announced the use of FinFETs, which it calls tri-gate technology, on its 1270 manufacturing process (22-nm). The 1270 process is starting to ramp production now with volume production at Intel's F32 fab in Chandler, Arizona scheduled for the second half of 2011. This gives Intel a lead of about one year over TSMC in terms of geometry and a longer one in terms of the use of FinFETs. FinFETs are said to give a power-performance benefit versus planar transistors at these fine geometries. Marced said that because Intel is vertically integrated and controls all aspects of design, manufacturing and test it has been able to introduce FinFETs more quickly than TSMC. "We need the ecosystem to be ready for FinFETs, which means design tools, IP, design kits and so on. For us 20-nm will be planar." The explosion of designs for the smartphone/tablet killer application is one reason that Marced believes TSMC can outgrow the foundry sector in 2011. TSMC is aiming for 20 percent revenue growth in 2011 while it expects the sector to achieve 15 percent growth. Meanwhile it reckons on the semiconductor market overall being only 2 percent up.